steile_flanken
Inhaltsverzeichnis
steile Flanken
Vorgabe ist eine Flankensteilheit von 50V/ns.
Digitalgatter der Serie 74F00 (vierfach NAND-Gatter mit zwei Eingängen) sind sehr schnell, das Datenblatt weist eine Anstiegszeit (tr) und Abfallzeit (tf) von 1,5V in 2,5ns aus. Damit würde man bei einer Amplitude von mind. 150V die gewünschte Flankensteilheit erreichen können. Um derart hohe Spannungen zu schalten, müsste der Ausgang mit einem schnellen MOSFET bestückt werden.
Allerdings gibt es genau für diesen Zweck optimierte Schaltkreise, z.B. den Treiberschaltkreis "ISL55110", der bei einer Eingangskapazität am MOSFET von 100pF sogar in 1,5ns schalten kann. Die Werte im Datenblatt des NAND-Gatter's beziehen sich auf eine Last-Kapazität von 50pF. Damit ist der MOSFET-Treiberschaltkreis, unter gleichen Bedingungen, schneller als das NAND-Gatter.
MOSFET's, die so schnell sind, haben recht große Eingangskapazitäten (z.B.: ~700pF). Dadurch werden die Treiber recht langsam.
Ein Bipolartransistor hat deutlich kleinere Eingangskapazitäten (z.B.: ~4,5pF) kann aber, bei so hohen Schaltgeschwindigkeiten, nur Spannungen von 5 bis 20 Volt (je nach Transistor-Typ) schalten.
Bezugsquellen
MOSFET
Um eine Flankensteilheit von 50V/ns zu erreichen, kommt hier nur der IRF820 von STMicroelectronics in Frage, von den anderen Herstellern sind die IRF820 zu langsam und die IRF740 haben eine zu große Eingangskapazität. Bei einer Eingangskapazität von mehr als 1000pF kann der Treiner ISL55110 den MOSFET nicht mehr schnell genug ansteuern.
Treiber
8 Ld TSSOP: ISL55110IVZ
MOSFET-Treiber, der ist nötig, da ein MOSFET noch so schnell sein kann, der Ausgang wird nur steile Flanken liefern, wenn der Eingang steile Flanken bekommt.
- Hersteller: intersil
- 5V to 12V Pulse Magnitude
- High Current Drive 3.5A
- 6ns Minimum Pulse Width
- 1.5ns Rise and Fall Times, 100pF Load
- 6.9ns Rise and Fall Times, 1000pF Load
- Low Skew
- 3.3V and 5V Logic Compatible
- In-Phase and Anti-Phase Outputs
- Small QFN and TSSOP Packaging
- Low Quiescent Current
- Pb-free (RoHS compliant)
Transistor
TO-220AB: IRF740
Der IRF740B ist deutlich langsamer als der IRF740!
- N - CHANNEL 400V - 0.48 Ω - 10 A - TO-220
Hersteller : STMicroelectronics Drain-source Wiederstand (V GS = 10 V / I D = 5,3 A) (R DS) : ~0,48-0,55 Ohm Drain-source Voltage (V DS = 0) (V DS) : ...-400 V Drain-gate Voltage (R GS = 20 k) (V DGR) : ...-400 V Gate-source Voltage (V GS) : +/- 20 V Drain Current (continuous) at T C = 25°C (I D) : ...-10 A Drain Current (continuous) at T C = 100°C (I D) : ...-6,3 A Total Power Dissipation at T C = 25°C (P D) : ...-125 W Input Capacitance (VDS = 25V, VGS = 0V, f = 1MHz) (C ISS): ~1400 pF Output Capacitance (VDS = 25V, VGS = 0V, f = 1MHz) (C OSS): ~ 220 pF Reverse Transfer Capacitance (VDS = 25V, VGS = 0V, f = 1MHz) (C RSS): ~ 27 pF Rise Time (t r) : ~ 10 ns Fall Time (t f) : ~ 10 ns
Hersteller : FAIRCHILD (Fairchild Semiconductor) Drain-source Wiederstand (V GS = 10 V / I D = 5,3 A) (R DS) : ...-0,55 Ohm Drain-source Voltage (V DS = 0) (V DS) : ...-400 V Drain-gate Voltage (R GS = 20 k) (V DGR) : ...-400 V Gate-source Voltage (V GS) : +/- 20 V Drain Current (continuous) at T C = 25°C (I D) : ...-10 A Drain Current (continuous) at T C = 100°C (I D) : ...-6,3 A Total Power Dissipation at T C = 25°C (P D) : ...-125 W Input Capacitance (VDS = 25V, VGS = 0V, f = 1MHz) (C ISS): ~1600 pF Output Capacitance (VDS = 25V, VGS = 0V, f = 1MHz) (C OSS): ~ 450 pF Reverse Transfer Capacitance (VDS = 25V, VGS = 0V, f = 1MHz) (C RSS): ~ 150 pF Rise Time (t r) : ...- 15 ns Fall Time (t f) : ...- 35 ns
Hersteller : INTERSIL (Intersil Corporation) Drain-source Wiederstand (V GS = 10 V / I D = 5,3 A) (R DS) : ...-0,55 Ohm Drain-source Voltage (V DS = 0) (V DS) : ...-400 V Drain-gate Voltage (R GS = 20 k) (V DGR) : ...-400 V Gate-source Voltage (V GS) : +/- 20 V Drain Current (continuous) at T C = 25°C (I D) : ...-10 A Drain Current (continuous) at T C = 100°C (I D) : ...-6,3 A Total Power Dissipation at T C = 25°C (P D) : ...-125 W Input Capacitance (VDS = 25V, VGS = 0V, f = 1MHz) (C ISS): ~1250 pF Output Capacitance (VDS = 25V, VGS = 0V, f = 1MHz) (C OSS): ~ 300 pF Reverse Transfer Capacitance (VDS = 25V, VGS = 0V, f = 1MHz) (C RSS): ~ 80 pF Rise Time (t r) : ~25-41 ns Fall Time (t f) : ~25-36 ns
Hersteller : VISHAY (Vishay Siliconix) Drain-source Wiederstand (V GS = 10 V / I D = 5,3 A) (R DS) : ...-0,55 Ohm Drain-source Voltage (V DS = 0) (V DS) : 400-... V Drain-gate Voltage (R GS = 20 k) (V DGR) : ...-400 V Gate-source Voltage (V GS) : +/- 20 V Drain Current (continuous) at T C = 25°C (I D) : ...-10 A Drain Current (continuous) at T C = 100°C (I D) : ...-6,3 A Total Power Dissipation at T C = 25°C (P D) : ...-125 W Input Capacitance (VDS = 25V, VGS = 0V, f = 1MHz) (C ISS): ~1400 pF Output Capacitance (VDS = 25V, VGS = 0V, f = 1MHz) (C OSS): ~ 330 pF Reverse Transfer Capacitance (VDS = 25V, VGS = 0V, f = 1MHz) (C RSS): ~ 120 pF Rise Time (t r) : ~ 27 ns Fall Time (t f) : ~ 24 ns
Hersteller : SUNTAC (Suntac Electronic Corp.) Drain-source Wiederstand (V GS = 10 V / I D = 5,3 A) (R DS) : ~0,4-0,55 Ohm Drain-source Voltage (V DS = 0) (V DS) : 400-... V Drain-gate Voltage (R GS = 20 k) (V DGR) : ...-400 V Gate-source Voltage (V GS) : +/- 20 V Drain Current (continuous) at T C = 25°C (I D) : ...-10 A Drain Current (continuous) at T C = 100°C (I D) : ...-6,3 A Total Power Dissipation at T C = 25°C (P D) : ...-125 W Input Capacitance (VDS = 25V, VGS = 0V, f = 1MHz) (C ISS): ~1570 pF Output Capacitance (VDS = 25V, VGS = 0V, f = 1MHz) (C OSS): ~ 230 pF Reverse Transfer Capacitance (VDS = 25V, VGS = 0V, f = 1MHz) (C RSS): ~ 55 pF Rise Time (t r) : ~ 37 ns Fall Time (t f) : ~ 31 ns
Hersteller : DCCOM (Dc Components) Drain-source Wiederstand (V GS = 10 V / I D = 5,3 A) (R DS) : ~0,4-0,55 Ohm Drain-source Voltage (V DS = 0) (V DS) : 400-... V Drain-gate Voltage (R GS = 20 k) (V DGR) : ...-400 V Gate-source Voltage (V GS) : +/- 20 V Drain Current (continuous) at T C = 25°C (I D) : ...-10 A Drain Current (continuous) at T C = 100°C (I D) : ...-6,3 A Total Power Dissipation at T C = 25°C (P D) : ...-125 W Input Capacitance (VDS = 25V, VGS = 0V, f = 1MHz) (C ISS): ~1570 pF Output Capacitance (VDS = 25V, VGS = 0V, f = 1MHz) (C OSS): ~ 230 pF Reverse Transfer Capacitance (VDS = 25V, VGS = 0V, f = 1MHz) (C RSS): ~ 55 pF Rise Time (t r) : ~ 37 ns Fall Time (t f) : ~ 31 ns
Hersteller : ISC (Inchange Semiconductor Company Limited) Drain-source Wiederstand (V GS = 10 V / I D = 5 A) (R DS) : ...-0,55 Ohm Drain-source Voltage (V DS = 0) (V DS) : 400-... V Drain-gate Voltage (R GS = 20 k) (V DGR) : ...-400 V Gate-source Voltage (V GS) : +/- 20 V Drain Current (continuous) at T C = 25°C (I D) : ...-10 A Drain Current (continuous) at T C = 100°C (I D) : ...-6,3 A Total Power Dissipation at T C = 25°C (P D) : ...-125 W
TO-220: IRF820
- N - CHANNEL Power MOSFET 500 V - 3,0 Ω - 2,5 A - TO-220
Hersteller : MOTOROLA (Motorola, Inc) / freescale semiconductor Drain-source Wiederstand (V GS = 10 V / I D = 1,0 A) (R DS) : 3,0 Ohm Drain-source Voltage (V DS = 0) (V DS) : 500 V Drain-gate Voltage (R GS = 20 k) (V DGR) : 500 V Gate-source Voltage (V GS) : +/- 20 V Drain Current (continuous) at T C = 25°C (I D) : 2,5 A Total Power Dissipation at T C = 25°C (P D) : 40 W Input Capacitance (VDS = 25V, VGS = 0V, f = 1MHz) (C ISS): ...-400 pF Output Capacitance (VDS = 25V, VGS = 0V, f = 1MHz) (C OSS): ...-150 pF Reverse Transfer Capacitance (VDS = 25V, VGS = 0V, f = 1MHz) (C RSS): ...- 40 pF Rise Time (t r) : ...- 50 ns Fall Time (t f) : ...- 30 ns
Hersteller : STMicroelectronics Drain-source Wiederstand (V GS = 10 V / I D = 1,5 A) (R DS) : ~2,5-3,0 Ohm Drain-source Voltage (V DS = 0) (V DS) : 500 V Drain-gate Voltage (R GS = 20 k) (V DGR) : 500 V Gate-source Voltage (V GS) : +/- 20 V Drain Current (continuous) at T C = 25°C (I D) : 2,5 A Drain Current (continuous) at T C = 100°C (I D) : 1,6 A Total Power Dissipation at T C = 25°C (P tot) : 80 W Input Capacitance (VDS = 25V, VGS = 0V, f = 1MHz) (C ISS): ~360 pF Output Capacitance (VDS = 25V, VGS = 0V, f = 1MHz) (C OSS): ~ 61 pF Reverse Transfer Capacitance (VDS = 25V, VGS = 0V, f = 1MHz) (C RSS): ~ 6 pF Rise Time (t r) : ~8 ns Fall Time (t f) : ~5 ns
Hersteller : SAMSUNG (Samsung semiconductor) Drain-source Wiederstand (V GS = 10 V / I D = 1,4 A) (R DS) : ~2,5-3,0 Ohm Drain-source Voltage (V DS = 0) (V DS) : 500 V Drain-gate Voltage (R GS = 20 k) (V DGR) : 500 V Gate-source Voltage (V GS) : +/- 20 V Drain Current (continuous) at T C = 25°C (I D) : 2,5 A Drain Current (continuous) at T C = 100°C (I D) : 1,6 A Total Power Dissipation at T C = 25°C (P D) : 50 W Input Capacitance (VDS = 25V, VGS = 0V, f = 1MHz) (C ISS): ~390 pF Output Capacitance (VDS = 25V, VGS = 0V, f = 1MHz) (C OSS): ~ 52 pF Reverse Transfer Capacitance (VDS = 25V, VGS = 0V, f = 1MHz) (C RSS): ~ 22 pF Rise Time (t r) : ~12-18 ns Fall Time (t f) : ~12-18 ns
Hersteller : FAIRCHILD (Fairchild Semiconductor) Drain-source Wiederstand (R DS) : 3,0 Ohm Drain-source Voltage (V DS = 0) (V DS) : 500 V Drain-gate Voltage (R GS = 20 k) (V DGR) : 500 V Gate-source Voltage (V GS) : +/- 20 V Drain Current (continuous) at T C = 25°C (I D) : 2,5 A Drain Current (continuous) at T C = 100°C (I D) : 1,5 A Total Power Dissipation at T C = 25°C (P D) : 40 W Input Capacitance (VDS = 25V, VGS = 0V, f = 1MHz) (C ISS): ...-400 pF Output Capacitance (VDS = 25V, VGS = 0V, f = 1MHz) (C OSS): ...-100 pF Reverse Transfer Capacitance (VDS = 25V, VGS = 0V, f = 1MHz) (C RSS): ...- 40 pF Rise Time (t r) : ...-50 ns Fall Time (t f) : ...-60 ns
Hersteller : INTERSIL (Intersil Corporation) Drain-source Wiederstand (R DS) : 3,0 Ohm Drain-source Voltage (V DS = 0) (V DS) : 500 V Drain-gate Voltage (R GS = 20 k) (V DGR) : 500 V Gate-source Voltage (V GS) : +/- 20 V Drain Current (continuous) at T C = 25°C (I D) : 2,5 A Drain Current (continuous) at T C = 100°C (I D) : 1,6 A Total Power Dissipation at T C = 25°C (P D) : 50 W Input Capacitance (VDS = 25V, VGS = 0V, f = 1MHz) (C ISS): ~360 pF Output Capacitance (VDS = 25V, VGS = 0V, f = 1MHz) (C OSS): ~ 60 pF Reverse Transfer Capacitance (VDS = 25V, VGS = 0V, f = 1MHz) (C RSS): ~ 10 pF Rise Time (t r) : ~11-18 ns Fall Time (t f) : ~12-18 ns
Hersteller : IRF (International Rectifier) Drain-source Wiederstand (R DS) : 3,0 Ohm Drain-source Voltage (V DS = 0) (V DS) : 500 V Drain-gate Voltage (R GS = 20 k) (V DGR) : 500 V Gate-source Voltage (V GS) : +/- 20 V Drain Current (continuous) at T C = 25°C (I D) : 2,5 A Drain Current (continuous) at T C = 100°C (I D) : 1,6 A Total Power Dissipation at T C = 25°C (P D) : 50 W Input Capacitance (VDS = 25V, VGS = 0V, f = 1MHz) (C ISS): ~360 pF Output Capacitance (VDS = 25V, VGS = 0V, f = 1MHz) (C OSS): ~ 92 pF Reverse Transfer Capacitance (VDS = 25V, VGS = 0V, f = 1MHz) (C RSS): ~ 37 pF Rise Time (t r) : ~8,6 ns Fall Time (t f) : ~16 ns
Hersteller : VISHAY (Vishay Siliconix) Drain-source Wiederstand (V GS = 10 V) (R DS) : 3,0 Ohm Drain-source Voltage (V DS = 0) (V DS) : 500 V Drain-gate Voltage (R GS = 20 k) (V DGR) : 500 V Gate-source Voltage (V GS) : +/- 20 V Drain Current (continuous) at T C = 25°C (I D) : 2,5 A Drain Current (continuous) at T C = 100°C (I D) : 1,6 A Total Power Dissipation at T C = 25°C (P D) : 50 W Input Capacitance (VDS = 25V, VGS = 0V, f = 1MHz) (C ISS): ~360 pF Output Capacitance (VDS = 25V, VGS = 0V, f = 1MHz) (C OSS): ~ 92 pF Reverse Transfer Capacitance (VDS = 25V, VGS = 0V, f = 1MHz) (C RSS): ~ 37 pF Rise Time (t r) : ~8,6 ns Fall Time (t f) : ~16 ns
Hersteller : SUNTAC (Suntac Electronic Corp.) Drain-source Wiederstand (V GS = 10 V / I D = 1,2 A) (R DS) : ...-4,4 Ohm Drain-source Voltage (V DS = 0) (V DS) : 500 V Drain-gate Voltage (R GS = 20 k) (V DGR) : 500 V Gate-source Voltage (V GS) : +/- 20 V Drain Current (continuous) at T C = 25°C (I D) : 2,0 A Total Power Dissipation at T C = 25°C (P D) : 60 W Input Capacitance (VDS = 25V, VGS = 0V, f = 1MHz) (C ISS): ~435 pF Output Capacitance (VDS = 25V, VGS = 0V, f = 1MHz) (C OSS): ~ 56 pF Reverse Transfer Capacitance (VDS = 25V, VGS = 0V, f = 1MHz) (C RSS): ~9,2 pF Rise Time (t r) : ~ 21 ns Fall Time (t f) : ~ 24 ns
Bipolar
Schwellwertschalter / Schmitt-Trigger
Mit bipolaren Transistoren kann man mit Hilfe von Schwellwertschaltern bzw. Schmitt-Trigger sehr steile Impuls-Flanken erreichen. Egal welche Impulsform in den Schwellwertschalter rein geht, es kommt immer ein Rechteckimpuls wieder raus.
- BASH-Script zum berechnen eines Schmitt-Trigger's: Schwellwertschalter.sh
Treiber
MC100EP16
- 3.3V / 5V ECL Differential Receiver/Driver
Auf http://www.mikrocontroller.net/topic/177925 hat einer den MC100EP16 empfohlen, da er eine Flankensteilheit von Lo (-400mV) auf Hi (+400mV) in ca. 150pSek schaffen soll. Es handelt sich um einen 5V-Treiber-Chip, der auch mit 150-Ohm-Pull-Down-Wiederständen am Ausgang betrieben werden kann.
Hersteller : ONSEMI (ON Semiconductor) PECL Mode Operating Range : 3,3 - 5,5 V Frequenz : ~ 4 GHz Internal Input Pulldown Resistor : 75000 Ohm Internal Input Pullup Resistor : 37500 Ohm ESD Protection (Human Body Model) : 4 kV Transistor Count : 167 Output Current (Continuous) (I out) : 50 mA Output Current (Surge) (I out) : 100 mA Input Voltage Swing (Differential Configuration): 150-1200 mV Output Rise/Fall Times (20%-80%) (t r / t f) : 80-200 (150) ps Ausgangsspannungsdifferenz zw. Lo und Hi : -400 - +400 mV
Transistor (NPN)
SOT173: BFS 17P
Hersteller : SIEMENS Collector-emitter voltage (Vceo): 15 V Collector-base voltage (Vcbo): 25 V Emitter-base voltage (Vebo): 2.5 V Collector current (Ic) : 25 mA Peak collector current (f ≥ 10 MHz) (Icm) : 50 mA Total power dissipation (TS ≤ 55 °C) (Ptot): 280 mW Frequenz - Übergang : 2,5 GHz Frequenz : 1MHz ~ 1GHz DC current gain (hFE) : 20-150 (70)
SOT173: BFQ 73S
Hersteller : SIEMENS Collector-emitter voltage (Vceo): 15 V Collector-base voltage (Vcbo): 20 V Emitter-base voltage (Vebo): 3 V Collector current (Ic) : 100 mA Total power dissipation (TS ≤ 110 °C) (Ptot): 500 mW Frequenz - Übergang : 5 GHz Frequenz : 1MHz ~ 2GHz DC current gain (hFE) : 30-250 (90)
SOT23: BFR92A
Hersteller : PHILIPS Collector-emitter voltage (Vceo): ...-15 V Collector-base voltage (Vcbo): ...-20 V Emitter-base voltage (Vebo): ...-2 V Collector current (Ic) : ...-25 mA Total power dissipation (TS ≤ 95 °C) (Ptot): ...-300 mW Frequenz - Übergang : ~5 GHz Frequenz : 1MHz ~ 2GHz DC current gain (hFE) : 65-135 (90)
SOT23: BFR106
Hersteller : PHILIPS Collector-emitter voltage (Vceo): ...-15 V Collector-base voltage (Vcbo): ...-20 V Emitter-base voltage (Vebo): ...-3 V Collector current (Ic) : ...-100 mA Total power dissipation (TS ≤ 95 °C) (Ptot): ...-500 mW Frequenz - Übergang : 3,5-... (5) GHz Frequenz : 1MHz ~ 2GHz DC current gain (hFE) : 25-220 (80)
3-SOT223: BFG97
Hersteller : Collector-emitter voltage (Vceo): ...-15 V Collector-base voltage (Vcbo): Emitter-base voltage (Vebo): Collector current (Ic) : Total power dissipation (TS ≤ 95 °C) (Ptot): ...-1 W Frequenz - Übergang : ...-5,5 GHz Frequenz : DC current gain (hFE) :
3-SOT223: BFG135
Hersteller : Collector-emitter voltage (Vceo): ...-15 V Collector-base voltage (Vcbo): Emitter-base voltage (Vebo): Collector current (Ic) : Total power dissipation (TS ≤ 95 °C) (Ptot): ...-1 W Frequenz - Übergang : ...-7 GHz Frequenz : DC current gain (hFE) :
3-SOT223: BFG591
Hersteller : Collector-emitter voltage (Vceo): ...-15 V Collector-base voltage (Vcbo): Emitter-base voltage (Vebo): Collector current (Ic) : Total power dissipation (TS ≤ 95 °C) (Ptot): ...-2 W Frequenz - Übergang : ...-7 GHz Frequenz : DC current gain (hFE) :
3-SOT143R: BFG520
Hersteller : Collector-emitter voltage (Vceo): ...-15 V Collector-base voltage (Vcbo): Emitter-base voltage (Vebo): Collector current (Ic) : ...-70 mA Total power dissipation (TS ≤ 95 °C) (Ptot): ...-300 mW Frequenz - Übergang : ...-9 GHz Frequenz : DC current gain (hFE) :
3-SOT343N: BFG520W/X
Hersteller : Collector-emitter voltage (Vceo): ...-15 V Collector-base voltage (Vcbo): Emitter-base voltage (Vebo): Collector current (Ic) : ...-70 mA Total power dissipation (TS ≤ 95 °C) (Ptot): ...-500 mW Frequenz - Übergang : ...-9 GHz Frequenz : DC current gain (hFE) :
3-SOT89: BFG540
Hersteller : Collector-emitter voltage (Vceo): ...-15 V Collector-base voltage (Vcbo): Emitter-base voltage (Vebo): Collector current (Ic) : ...-120 mA Total power dissipation (TS ≤ 95 °C) (Ptot): ...-1,2 W Frequenz - Übergang : ...-9 GHz Frequenz : DC current gain (hFE) :
3-SOT23: BFG540
Hersteller : Collector-emitter voltage (Vceo): ...-15 V Collector-base voltage (Vcbo): Emitter-base voltage (Vebo): Collector current (Ic) : ...-120 mA Total power dissipation (TS ≤ 95 °C) (Ptot): ...-500 mW Frequenz - Übergang : ...-9 GHz Frequenz : DC current gain (hFE) :
3-SOT323: BFG540
Hersteller : Collector-emitter voltage (Vceo): ...-15 V Collector-base voltage (Vcbo): Emitter-base voltage (Vebo): Collector current (Ic) : ...-120 mA Total power dissipation (TS ≤ 95 °C) (Ptot): ...-500 mW Frequenz - Übergang : ...-9 GHz Frequenz : DC current gain (hFE) :
3-SOT343R: BFG540W/X
Hersteller : Collector-emitter voltage (Vceo): ...-15 V Collector-base voltage (Vcbo): Emitter-base voltage (Vebo): Collector current (Ic) : Total power dissipation (TS ≤ 95 °C) (Ptot): ...-500 mA Frequenz - Übergang : ...-9 GHz Frequenz : DC current gain (hFE) :
3-SOT223: BFG541
Hersteller : Collector-emitter voltage (Vceo): ...-15 V Collector-base voltage (Vcbo): Emitter-base voltage (Vebo): Collector current (Ic) : Total power dissipation (TS ≤ 95 °C) (Ptot): ...-650 mA Frequenz - Übergang : ...-9 GHz Frequenz : DC current gain (hFE) :
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